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Polar2 TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
IXTP450P2
IXTQ450P2
IXTH450P2
V DSS
I D25
R DS(on)
t rr(typ)
=
=
≤
=
500V
16A
330 m Ω
400 ns
Fast Intrinsic Diode
TO-220AB (IXTP)
G
DS
Tab
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
500
500
V
V
TO-3P (IXTQ)
V GSS
V GSM
I D25
I DM
I A
E AS
dv/dt
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
± 30
± 40
16
48
16
750
10
V
V
A
A
A
mJ
V/ns
G
D
S
TO-247(IXTH)
Tab
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
°C
°C
G
D
G = Gate
S = Source
Features
S
Tab
D = Drain
Tab = Drain
M d
Weight
Mounting Torque
TO-220
TO-3P
TO-247
1.13/10
3.0
5.5
6.0
Nm/lb.in.
g
g
g
Avalanche Rated
Fast Intrinsic Diode
Dynamic dv/dt Rated
Low Package Inductance
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
500
V
High Power Density
Easy to Mount
Space Savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
2.5
4.5 V
± 100 nA
5 μ A
25 μ A
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
330 m Ω
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS100241A(10/11)
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IXTH48P20P 功能描述:MOSFET -48.0 Amps -200V 0.085 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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